Semiconductor device with improved contact fuse

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

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Details

C438S668000

Reexamination Certificate

active

07612454

ABSTRACT:
One aspect of the invention provides an integrated circuit(IC) [400b]. The IC comprises transistors [410b] and contact fuses [422b]. The contact fuses each comprise a conducting layer [424b], a frustum-shaped contact [426b] has a narrower end that contacts the conducting layer and a first metal layer [427b] that is located over the conducting layer. A wider end of the frustum-shaped contact contacts the first metal layer. The frustum-shaped contact has a ratio of an opening of the wider end to the narrower end that is at least about 1.2. The contact fuses each further include a heat sink [432b] that is located over and contacts the first metal layer.

REFERENCES:
patent: 6791135 (2004-09-01), Takenaka
patent: 7064369 (2006-06-01), Koh
patent: 7118958 (2006-10-01), Phan et al.
patent: 7205168 (2007-04-01), Oohata et al.
patent: 2006/0049511 (2006-03-01), Schaefer
patent: 2006/0279975 (2006-12-01), Choi
patent: 2007/0246796 (2007-10-01), Guo et al.

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