1986-05-22
1987-08-11
Edlow, Martin H.
357 2313, 357 13, 357 89, H01L 2978, H01L 2990
Patent
active
046865519
ABSTRACT:
A MOS transistor having a capability for withstanding a higher surge voltage. The transistor comprises a high specific resistance region, a low specific resistance region located on the high specific resistance region and a well region located side by side with the high specific resistance region. The bottom surface of the well region comes in contact with the low resistance region, thereby breakdown current flows uniformly over a wide area.
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Edlow Martin H.
Limanek Robert
Nissan Motor Co,. Ltd.
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