Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2003-08-06
2009-06-30
Coleman, W. David (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C257S096000
Reexamination Certificate
active
07553685
ABSTRACT:
A light-emitting device100has ITO transparent electrode layers8, 10used for applying drive voltage for light-emission to a light-emitting layer section24, and is designed so as to extract light from the light-emitting layer section24through the ITO transparent electrode layers8, 10. The light-emitting device100also has contact layers composed of In-containing GaAs, formed between the light-emitting layer section24and the ITO transparent electrode layers8, 10, so as to contact with the ITO transparent electrode layers respectively. The contact layers7, 9are formed by annealing a stack13obtained by forming GaAs layers7′, 9′on the light-emitting layer section, and by forming the ITO transparent electrode layers8, 10so as to contact with the GaAs layers7′, 9′,to thereby allow In to diffuse from the ITO transparent electrode layers8, 10into the GaAs layers7′, 9′.This provides a method of fabricating a light-emitting device, in which the ITO transparent electrode layers as the light-emission drive electrodes are bonded as being underlain by the contact layers, to thereby reduce contact resistance of these electrodes, and to thereby make the contact layers less susceptible to difference in the lattice constants with those of the light-emitting layer section during the formation thereof.
REFERENCES:
patent: 5481122 (1996-01-01), Jou et al.
patent: 6057562 (2000-05-01), Lee et al.
patent: 6121635 (2000-09-01), Watanabe et al.
patent: 6225648 (2001-05-01), Hsieh et al.
patent: 6350997 (2002-02-01), Saeki
patent: 6483127 (2002-11-01), Saeki
patent: 6787383 (2004-09-01), Ikeda et al.
patent: 1-225178 (1989-09-01), None
patent: 5-190893 (1993-07-01), None
patent: 1992-355541 (1994-07-01), None
patent: 7-66455 (1995-03-01), None
patent: 6-188455 (1995-07-01), None
patent: 11-4020 (1999-01-01), None
patent: 11-17220 (1999-01-01), None
patent: 11-307810 (1999-11-01), None
patent: 2000-196152 (2000-07-01), None
patent: 2001-144322 (2001-05-01), None
patent: 2001-223384 (2001-08-01), None
patent: 2003-174197 (2003-06-01), None
patent: 565954 (2003-12-01), None
Bass et al., Handbook of Optics, McGraw-Hill Inc., vol. 1, Chapter 12: Light-Emitting Diodes, pp. 12.1-12.39.
Lakhani, A.; The role of compound formation and heteroepitaxy in indium-based ohmic contacts to GaAs; Sep. 15, 1984; J. Appl. Phys.; vol. 56, pp. 1888-1891.
Morisaki Hiroshi
Noto Nobuhiko
Nozaki Shinji
Uchida Kazuo
Yamada Masato
Booker Vicki B
Coleman W. David
Oliff & Berridg,e PLC
Shin-Etsu Handotai & Co., Ltd.
LandOfFree
Method of fabricating light-emitting device and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating light-emitting device and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating light-emitting device and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4057963