Photo-detector and related methods

Details Photo-detector and related methods Photo-detector and related methods

2008-03-13

2009-10-20

Tran, Long K (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S065000, C438S066000, C257S232000, C257S233000, C257S292000, C257S432000, C257SE25032, C257SE31058, C257SE31076, C257SE33077, C338S015000

Reexamination Certificate

active

07605013

ABSTRACT:
An apparatus comprising at least one multilayer wafer which includes a device layer adjacent to a barrier layer, and the device layer includes at least two photoconductive regions separated by an etched channel extending through the device layer. In some instances the apparatus may be an accelerometer having two photodiodes formed on a silicon-on-insulator (SOI) wafer with the photodiodes defined by one or more etched channels extending through the device layer of the SOI wafer. Also disclosed are methods for forming such an apparatus.

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