Chemical beam epitaxy system

Details Chemical beam epitaxy system Chemical beam epitaxy system

1986-09-03

1987-10-13

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118715, 118719, 118730, C23C 806

Patent

active

046990852

ABSTRACT:
A chemical beam epitaxy system including a cylindrical vacuum chamber (32) with wafer heaters (42) affixed about the cylindrical wall, a rotatable wafer holder ring (40) with mounted wafer holders (38) adjacent the wafer heaters (42), and a central rotatble set of gas cells (44) for directing chemical beams (50, 54) across wafers (52) in the wafer holders (38).

REFERENCES:
Tsang, Chemical Beam Epitaxy of InP and GaAs, Appl. Phys. Lett (45), 1234 (1984).

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