Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-06-02
2008-11-04
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S202000, C257S203000, C257S204000, C257S205000, C257S206000, C257S207000, C257S208000, C257S209000, C257S210000, C257S211000, C257S621000, C257S759000, C257S760000, C257S774000, C257S786000
Reexamination Certificate
active
07446418
ABSTRACT:
The semiconductor device has insulating films40, 42formed over a substrate10; an interconnection58buried in at least a surface side of the insulating films40, 42; insulating films60, 62formed on the insulating film42and including a hole-shaped via-hole60and a groove-shaped via-hole66ahaving a pattern bent at a right angle; and buried conductors70, 72aburied in the hole-shaped via-hole60and the groove-shaped via-hole66a. A groove-shaped via-hole66ais formed to have a width which is smaller than a width of the hole-shaped via-hole66. Defective filling of the buried conductor and the cracking of the inter-layer insulating film can be prevented. Steps on the conductor plug can be reduced. Accordingly, defective contact with the upper interconnection layer and the problems taking place in forming films can be prevented.
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Fujitsu Limited
Soward Ida M
Westerman, Hattori, Daniels & Adrian , LLP.
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