Prevention of agglomeration and inversion in a semiconductor sal

Fishing – trapping – and vermin destroying

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437192, 437200, 148DIG19, 20419217, H01L 21283, H01L 21336

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active

054496314

ABSTRACT:
A conductor is fabricated by forming a layer of doped polysilicon on a semiconductor substrate, patterning the layer of doped polysilicon so as to form a conductor, forming a nitrogen-enriched metal film on the conductor, and converting the nitrogen-enriched metal film to a nitrogen-enriched metal silicide film, wherein nitrogen contained in the nitrogen-enriched metal silicide film provides for improved thermal stability thereof.

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Nishiyama, A., et al., "A Thermally Stable Salicide Process . . . ", Jun. 12-13, 1990, VMIC Conf., pp. 310-316.
Georgiou, G., et al., "Thermal Stability Limits of Thin TiSi.sub.2 . . . ", J. Electro Chem. Soc., 141(5), May 1994, pp. 1351-1356.
Lasky, J., et al., "Comparison of Transformation Low-Resistivity Phase and Agglomeration . . . ", IEEE Trans. Elec. Devices, 38(2), Feb. 1991, pp. 262-269.

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