Thin film phototransistor, active matrix substrate using the...

Details Thin film phototransistor, active matrix substrate using the... Thin film phototransistor, active matrix substrate using the...

2003-07-03

2008-12-09

Ha, Nathan W (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

Reexamination Certificate

active

07462863

ABSTRACT:
A gate insulation film (14) and a semiconductor layer (15) are laminated on a gate electrode (13); and a source electrode (17) and a drain electrode (18) are formed on the semiconductor layer (15) by having a predetermined interval between their end portions. Each of the source electrode (17) and the drain electrode (18) includes a superimposition area (17aand18a), and at least one portion of the superimposition area (17aand18a) has translucency. This arrangement realizes improvement of photosensitivity (Ip/Id) without causing complication of wiring layout or manufacturing process.

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International Preliminary Examination Report mailed Jan. 22, 2004 in corresponding PCT Application No. PCT/JP03/008509.
International Search Report mailed Oct. 7, 2003 in corresponding PCT Application No. PCT/JP03/008509.

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