Method for effectively removing polysilicon nodule defects

Details Method for effectively removing polysilicon nodule defects Method for effectively removing polysilicon nodule defects

2006-04-11

2008-11-11

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S693000, C451S057000, C451S037000, C451S041000

Reexamination Certificate

active

07449413

ABSTRACT:
According to one exemplary embodiment, a method includes a step of forming a polysilicon layer over a substrate by using a deposition process, where the deposition process causes polysilicon nodule defects to form on a top surface of the polysilicon layer. The method further includes performing a polysilicon CMP process on the polysilicon layer, where the polysilicon CMP process removes a substantial percentage of the polysilicon nodule defects from the top surface of the polysilicon layer. The CMP process removes at least 95.0 percent of the polysilicon nodule defects from the top surface of the polysilicon layer. According to this embodiment, the polysilicon CMP process utilizes a polishing pressure that is less than 1.5 psi. The polysilicon CMP process also utilizes a table speed of between 20.0 rpm and 40.0 rpm. The polysilicon CMP process further utilizes a colloidal silica slurry.

REFERENCES:
patent: 7077728 (2006-07-01), Achuthan et al.
patent: 2006/0024932 (2006-02-01), Park et al.

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