Microelectromechanical devices and their fabrication

Details Microelectromechanical devices and their fabrication Microelectromechanical devices and their fabrication

2005-12-08

2008-12-23

Chen, Kin-Chan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S719000

Reexamination Certificate

active

07468324

ABSTRACT:
A method of fabricating microelectromechanical (MEMs) systems and in particular for producing silicon carbide (SiC) MEMs devices with improved mechanical properties. The method comprises reacting a dry etch plasma with a layered microstructure; the layered microstructure having an etch mask, a sacrificial layer and a device layer arranged between the etch mask and the sacrificial layer. The dry etch plasma is introduced into the environment of the layered microstructure such that the device layer is etched anisotropically and the sacrificial layer is etched substantially isotropically. The invention also provides a method for tuning MEMs devices by material de-stressing using an inert gas in the dry etch plasma.

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