Method of manufacturing a mask for forming a pattern in a semico

Details Method of manufacturing a mask for forming a pattern in a semico Method of manufacturing a mask for forming a pattern in a semico

1994-06-08

1995-09-12

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430322, 430316, 430323, 430326, 428432, G03F 900

Patent

active

054495784

ABSTRACT:
A method of manufacturing a mask for forming a pattern in a semiconductor device is disclosed. Material having high reflexibility is formed between a quartz substrate and a patterned chromium layer. The thickness of the quartz substrate is determined in consideration of the standing wave effect so as to use energy reflected off a patterned chromium layer and re-reflected off the quartz substrate base interface to augment direct, non-reflected light energy for the purpose of forming an image on a wafer. Accordingly, the amount of light exposed energy through gaps between adjacent chromium layer areas on the mask is increased during the formation of a micro pattern on the wafer. As a result, energy exposure time decreases and the depth of the focus increases.

REFERENCES:
patent: 5279911 (1994-01-01), Kamon et al.

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