Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2004-09-07
2008-11-11
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S422000
Reexamination Certificate
active
07449760
ABSTRACT:
The present invention provides a magnetic memory device capable of performing stable information writing operation by efficiently using a magnetic field generated by current flowing in a conductor and stably holding written information. A magnetic memory device includes: magnetic yoke disposed in correspondence with a region in which a write bit line and a write word line cross each other and constructed so as to surround partially or entirely the periphery of the lines; and a stacked body including a second magnetic layer of which magnetization direction changes according to an external magnetic field, and magnetically coupled to the magnetic yoke. The second magnetic layer has coercive force larger than that of the magnetic yoke, and coercive force of the magnetic yoke increases toward the second magnetic layer. Thus, the influence by remanent magnetization of the magnetic yoke can be suppressed, and the magnetization direction of the second magnetic layer can be stably held.
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Nguyen Cuong Q
Oliff & Berridg,e PLC
TDK Corporation
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