Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2005-08-30
2008-11-11
Heinz, A. J. (Department: 2627)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
Reexamination Certificate
active
07450350
ABSTRACT:
A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has an improved antiparallel (AP) pinned structure, i.e., a structure with first (AP1) and second (AP2) ferromagnetic layers separated by a nonmagnetic antiparallel coupling (APC) layer with the magnetization directions of AP1and AP2oriented substantially antiparallel. The AP2ferromagnetic layer (the layer in contact with the SV spacer layer) is an alloy of a ferromagnetic material and one or more additive elements of Cu, Au and Ag. The additive elements reduce the magnetic moment of the AP2layer, which enables its thickness to be increased so that its magnetic moment remains close to the magnetic moment of the AP1ferromagnetic layer. The thicker AP2layer allows for more bulk spin-dependent scattering of electrons which increases the magnetoresistance of the sensor. An annealed AP2layer results in more segregation of the ferromagnetic material grains and the additive element grains, and thus a further improvement in magnetoresistance as a result of more interfacial scattering of electrons.
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Carey Matthew J.
Childress Jeffrey R.
Maat Stefan
Berthold Thomas R.
Heinz A. J.
Hitachi Global Storage Technologies - Netherlands B.V.
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