Method for providing a temporary, deep shunt on wafer...

Details Method for providing a temporary, deep shunt on wafer... Method for providing a temporary, deep shunt on wafer...

2005-01-04

2008-12-30

Tugbang, A. Dexter (Department: 3729)

Metal working

Method of mechanical manufacture

Electrical device making

C029S603070, C029S847000, C360S323000, C360S327210, C451S041000

Reexamination Certificate

active

07469466

ABSTRACT:
A method of temporarily protecting an electrically sensitive component from damage due to electrostatic discharge is disclosed. The method includes the steps of defining a first shield that forms a first lead for both a component and a shunt; depositing a conductive material on the first shield to form the component and the shunt; defining an edge of the component and an edge of the shunt together in a single masking step; refilling with insulation adjacent the component and the shunt to their respective edges on the first shield; defining a second shield on both the component and the shunt that forms a second lead for both the component and the shunt to form a shunted assembly that electrically protects the component; lapping the shunted assembly; and removing a portion of the shunted assembly to remove the shunt and form an electrical open for an unshunted assembly.

REFERENCES:
patent: 4807073 (1989-02-01), Takeura et al.
patent: 5465186 (1995-11-01), Bajorek et al.
patent: 5491605 (1996-02-01), Hughbanks et al.
patent: 5638237 (1997-06-01), Phipps et al.
patent: 5761009 (1998-06-01), Hughbanks et al.
patent: 5805390 (1998-09-01), Takeura
patent: 6067220 (2000-05-01), Ahmann et al.
patent: 6267903 (2001-07-01), Watanuki
patent: 6427319 (2002-08-01), Cook et al.
patent: 6470566 (2002-10-01), Hsiao et al.
patent: 6643106 (2003-11-01), Bougtaghou et al.
patent: 6650511 (2003-11-01), Hsiao et al.
patent: 2002/0085318 (2002-07-01), Hsiao et al.
patent: 2003/0151858 (2003-08-01), Hsiao et al.
patent: 2003/0214761 (2003-11-01), Freitag et al.
patent: 2003/0220050 (2003-11-01), Bunch et al.
patent: 2004/0090715 (2004-05-01), Hsiao et al.
patent: 62076021 (1987-04-01), None

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