Output circuit provided with source follower circuit having depl

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

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Details

257316, 257291, 257402, 257403, H01L 2978

Patent

active

059124830

ABSTRACT:
A depletion type transistor formed on a semiconductor substrate includes a drain region and a source region formed in distinct areas on the substrate. An inversion layer is formed in the surface area between the drain and the source regions. The transistor further includes two insulated gates: a floating gate located above the substrate and insulated from the inversion layer by an insulating layer in such a way as to cover the inversion layer, and a control gate provided above the floating gate and insulated from the floating gate by the insulating layer.

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patent: 4984045 (1991-01-01), Matsunaga
patent: 5262987 (1993-11-01), Kojima
patent: 5422844 (1995-06-01), Wolstenholme et al.
patent: 5438211 (1995-08-01), Nakamura et al.
patent: 5488245 (1996-01-01), Shimizu et al.
patent: 5677876 (1997-10-01), Tanaka

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