Method for removing impurities existing in semiconductor substra

Details Method for removing impurities existing in semiconductor substra Method for removing impurities existing in semiconductor substra

1987-07-15

1989-06-06

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 24, H01L 21265, H01L 21322

Patent

active

048371726

ABSTRACT:
A large quantity of oxygen (10.sup.18 cm.sup.-3) is dissolved in a semiconductor, for example, a silicon crystal substrate. In particular, in the SOI technology for forming a buried oxide film in silicon by oxygen ion implantation, a large quantity of oxygen (up to 10.sup.20 cm.sup.-3) is left over in the silicon top layer. Such oxygen in the silicon becomes fine precipitates (defects) by the subsequent heat treatment step. Disclosed is, hence, a method for obtaining a semiconductor substrate of high quality by removing impurities by implanting ions containing light element (for example, hydrogen) before heat treatment.

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