Semiconductor layer structure and method of making the same

Details Semiconductor layer structure and method of making the same Semiconductor layer structure and method of making the same

2005-03-29

2008-12-30

Tran, Long K (Department: 2818)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S138000, C438S152000, C438S118000, C438S458000, C438S622000, C257SE21388, C257SE21703, C257SE27011, C257SE27088, C257SE27122

Reexamination Certificate

active

07470598

ABSTRACT:
A method of forming a circuit includes providing a first substrate; positioning an interconnect region on a surface of the first substrate; providing a second substrate; positioning a device structure on a surface of the second substrate, the device structure including a stack of at least three doped semiconductor material layers; and bonding the device structure to the interconnect region.

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