Forming method of stacking structure and manufacturing...

Details Forming method of stacking structure and manufacturing... Forming method of stacking structure and manufacturing...

2005-08-29

2008-12-30

Menz, Douglas M (Department: 2891)

Semiconductor device manufacturing: process

Electron emitter manufacture

C438S781000, C427S098900, C427S117000

Reexamination Certificate

active

07470554

ABSTRACT:
A method of forming a stacking structure by forming an electroconductive layer precursor pattern by an electroconductive paste made of a resin component, electroconductive fine particles, and glass fine particles, forming a dielectric layer precursor pattern by a dielectric paste made of a resin component and glass fine particles, and simultaneously baking both of those patterns, wherein they are held for a predetermined time while keeping a baking temperature which is equal to or higher than a decomposing temperature of the resin component and is equal to or lower than a baking start temperature of the glass fine particles and, thereafter, their baking is completed at the baking temperature which is equal to or higher than the baking start temperature of the glass fine particles and is lower than its softening point. Thus, the occurrence of a void and a pin hole in an insulative layer can be prevented in the stacking structure after the baking.

REFERENCES:
patent: 6604970 (2003-08-01), Yamada
patent: 6614167 (2003-09-01), Ono et al.
patent: 6653232 (2003-11-01), Uda et al.
patent: 6794813 (2004-09-01), Ono et al.
patent: 2003-133689 (2003-05-01), None

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