Semiconductor device

Details Semiconductor device Semiconductor device

2006-06-30

2008-11-11

Choe, Henry K (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including signal feedback means

C330S307000

Reexamination Certificate

active

07449956

ABSTRACT:
An inductively degenerated low noise amplifier arrangement is shown having a transistor and a bonding pad connected to the input terminal of the transistor, wherein the bonding pad has parasitic capacitance, and wherein the bonding pad includes a metal layer connected to a second terminal of the transistor. In case of a field-effect transistor the second terminal may be the source and in case of a bipolar transistor the second terminal may be the emitter. The metal layer may be the ground plane of the bonding pad or an additional, intermediate layer.

REFERENCES:
patent: 4990973 (1991-02-01), Ishikawa et al.
patent: 5164683 (1992-11-01), Shields
patent: 5945878 (1999-08-01), Westwick et al.
patent: 6300827 (2001-10-01), King
patent: 7298213 (2007-11-01), Kang
“Noise Figure and Impedance Matching in RF Cascode Amplifiers” by G. Girlando et al; IEEE Transactions on Circuits and Systems-II: Analog and Digital Signal Processing, vol. 46, No. 11, Nov. 1999.
“Noise Optimization of an Inductively Degenerated CMOS Low Noise Amplifier” by P. Andreani et al; IEEE Transactions on Circuits and Systems-II. Analog and Digital Signal Processing, vol. 48, No. 9, Sep. 2001.

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