Quantum well design for a coherent, single-photon detector...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reexamination Certificate

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C257S015000, C257S016000, C257S017000, C257S018000, C257S020000, C257SE33008

Reexamination Certificate

active

07462859

ABSTRACT:
A spin coherent, single photon detector has a body of semiconductor material with a quantum well region formed in barrier material in the body. The body has a first electrode forming an isolation electrode for defining, when negatively energized, an extent of the quantum well in the body and a second electrode positioned above a location where an electrostatic quantum dot is defined in said quantum well when positively energized. The quantum well occurs in three layers of material: a central quantum well layer and two outer quantum well layers, the two outer quantum well layers having a relatively low conduction band minimum and the barrier having a relatively high conduction band minimum while the central quantum well layer having a conduction band minimum between the relatively high and relatively low conduction band minimums.

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Buller et al., “Time-Resolved Photoluminescence Measurements in InGaAs/InP Multiple-Quantum-Well Structures at 1.3-m Wavelengths by Use of Germanium Single-Photon Avalanche Photodiodes”, Applied Optics, vol. 35 No. 6, (1996).
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