Semiconductor device and fabrication method thereof

Details Semiconductor device and fabrication method thereof Semiconductor device and fabrication method thereof

2005-07-22

2008-12-30

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S528000

Reexamination Certificate

active

07470969

ABSTRACT:
A semiconductor device and a fabrication method thereof in which the semiconductor device includes capacitors having a metal/insulator/metal (MIM) structure are disclosed. The method includes forming an interlayer insulating film on a structure of a semiconductor substrate that exposes lower wiring and a lower insulating film; selectively etching the interlayer insulating film to form a first electrode opening that exposes the lower wiring; forming a first electrode in the first electrode opening such that the first electrode opening is filled; selectively etching the interlayer insulating film at a region of the same adjacent to the first electrode to thereby form a second electrode opening; forming a dielectric layer along inner walls that define the second electrode opening; forming a second electrode on the dielectric layer in such a manner to fill the second electrode opening; and forming upper wiring on at least a portion of the second electrode.

REFERENCES:
patent: 6088070 (2000-07-01), Ohtani et al.
patent: 6500724 (2002-12-01), Zurcher et al.
patent: 2002/0155676 (2002-10-01), Stetter et al.
patent: 2003/0002238 (2003-01-01), Toyoda

Affiliated with

Also associated with

Rating

Semiconductor device and fabrication method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and fabrication method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and fabrication method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4032522