Fabrication of phase change memory element with phase-change...

Details Fabrication of phase change memory element with phase-change... Fabrication of phase change memory element with phase-change...

2007-01-29

2008-12-09

Sefer, A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000, C257S296000, C257S774000, C257SE27004, C257SE45002, C438S095000, C438S637000

Reexamination Certificate

active

07462858

ABSTRACT:
A phase change memory element with phase change electrodes, and method of making the same. Exemplary embodiments include a phase change bridge, including a bottom contact layer, a first insulating layer disposed on the bottom contact layer, a first phase change region disposed on the bottom contact layer adjacent the first insulating layer, a second phase change region disposed on the bottom contact layer adjacent the first insulating layer, wherein the first insulating layer thermally and electrically isolates the first and second phase change regions, and a third phase change region disposed on each of the first and second phase change regions, each of the third phase change regions isolated from one another by a conductor layer disposed on the first insulating layer.

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