Electrode structure and optical semiconductor element

Details Electrode structure and optical semiconductor element Electrode structure and optical semiconductor element

2006-10-19

2008-11-11

Nguyen, Dung T (Department: 2828)

Coherent light generators

Particular component circuitry

Electrode

C372S029013, C372S087000

Reexamination Certificate

active

07450620

ABSTRACT:
An electrode structure includes a first conductive layer, an insulation layer that covers at least a portion of a marginal area of an upper surface of the first conductive layer and has a first sloped section that slopes down toward the upper surface of the first conductive layer, a first electrode having one end formed on the first conductive layer and another end formed on the first sloped section, a third electrode that is formed on the first electrode and the insulation layer, and covers the another end of the first electrode.

REFERENCES:
patent: 2002/0084747 (2002-07-01), Fujieda et al.
patent: 2004-288971 (2004-10-01), None

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