Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2004-07-29
2008-11-18
Thai, Luan (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S773000, C257S777000, C257S782000, C438S455000, C438S637000, C438S667000, C438S672000, C438S675000
Reexamination Certificate
active
07453150
ABSTRACT:
A via for connecting metallization layers of chips bonded in a face-to-face configuration is provided, as well as methods of fabricating the via. The via may function as an interconnection of metallization layers in three-dimensional, stacked, integrated circuits, and may enable high density, low-resistance interconnection formation.
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Rensselaer Polytechnic Institute
Thai Luan
Wolf Greenfield & Sacks P.C.
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