Semiconductor device with conductive oxidation preventing film a

Details Semiconductor device with conductive oxidation preventing film a Semiconductor device with conductive oxidation preventing film a

1996-08-22

1999-05-25

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257412, 257757, 438653, 438656, H01L 2348, H01L 2352, H01L 2940, H01L 2976

Patent

active

059071885

ABSTRACT:
A semiconductor device includes a semiconductor substrate, and a laminated film insulatively formed over the semiconductor substrate, wherein the laminated film includes a semiconductor film, a metal film of refractory metal formed on the semiconductor film, a conductive oxidation preventing film disposed between the metal film and the semiconductor film, for preventing oxidation of the semiconductor film in an interface between the metal film and the semiconductor film, and an oxide film formed on a side surface of the semiconductor film and formed to extend into upper and lower portions of the semiconductor film in a bird's beak form.

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patent: 5573965 (1996-11-01), Chen et al.
patent: 5576579 (1996-11-01), Agnello et al.
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"An Inexpensive Diffusion Barrier Technology For Polycide Gate Electrodes With An SiN Layer Formed With ECR Nitrogen Plasma," Tetsuo Hosoya et al. Extended Abstracts Of The 1994 International Conference On Solid State Devices And Materials, Aug. 23, 1994; pp. 422-424.
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"Low-Resistivity Poly-Metal Gate Electrode Durable For High-Temperature Processing," Y. Akasaka et al. Proc. Of 12th VLSI Multilevel Interconnection Conference, Jun. 27-29, 1995; pp. 168-174.
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