Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2005-11-22
2008-11-18
Pham, Thanhha (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257S302000, C257SE27057
Reexamination Certificate
active
07453103
ABSTRACT:
The invention includes semiconductor structures having buried silicide-containing bitlines. Vertical surround gate transistor structures can be formed over the bitlines. The surround gate transistor structures can be incorporated into memory devices, such as, for example, DRAM devices. The invention can be utilized for forming 4F2DRAM devices.
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Lattice Press “Silicon Processing for The VLSI Era, vol. 2: Process Integration” Stanley Wolf, Ph.D. (1990).
Abbott Todd R.
Manning H. Montgomery
Micro)n Technology, Inc.
Pham Thanhha
Wells St. John P.S.
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