Programmable resistance memory element with threshold...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257S537000, C257S002000, C257S003000

Reexamination Certificate

active

07459762

ABSTRACT:
A programmable resistance memory element comprising a dielectric material between a programmable resistance memory material and a threshold switching material.

REFERENCES:
patent: 6236059 (2001-05-01), Wolstenholme et al.
patent: 6635914 (2003-10-01), Kozicki et al.
patent: 6795338 (2004-09-01), Parkinson et al.
patent: 2004/0026730 (2004-02-01), Kostylev et al.

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