Method for production of MRAM elements

Details Method for production of MRAM elements Method for production of MRAM elements

2007-02-01

2008-12-30

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257S295000, C257SE21655

Reexamination Certificate

active

07470552

ABSTRACT:
Magneto-resistive random access memory elements include a ferromagnetic layer having uniaxial anisotropy provided by elongate structures formed in the ferromagnetic film. The magnetic dipole aligns with the long axis of each structure. The structures can be formed in a variety of ways. For example, the ferromagnetic film can be applied to a seed layer having a textured surface. Alternatively, the ferromagnetic film can be stressed to generate the textured structure. Chemical mechanical polishing also can be used to generated the structures.

REFERENCES:
patent: 3019125 (1962-01-01), Lloyd et al.
patent: 4287225 (1981-09-01), Kneller et al.
patent: 4455626 (1984-06-01), Lutes
patent: 4604176 (1986-08-01), Paul
patent: 5431969 (1995-07-01), Mallary
patent: 5436047 (1995-07-01), Howard et al.
patent: 5482785 (1996-01-01), Mahvan et al.
patent: 5585198 (1996-12-01), Maeda et al.
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5680091 (1997-10-01), Maeda et al.
patent: 5691864 (1997-11-01), Saito
patent: 5700593 (1997-12-01), Okumura et al.
patent: 5738929 (1998-04-01), Maeda et al.
patent: 5989674 (1999-11-01), Marinero et al.
patent: 6127053 (2000-10-01), Lin et al.
patent: 6169303 (2001-01-01), Anthony
patent: 6248395 (2001-06-01), Homola et al.
patent: 6292389 (2001-09-01), Chen et al.
patent: 6351339 (2002-02-01), Bar-Gadda
patent: 6430085 (2002-08-01), Rizzo
patent: 6511761 (2003-01-01), Tanahashi et al.
patent: 6511855 (2003-01-01), Anthony
patent: 6625058 (2003-09-01), Iwasaki
patent: 6649423 (2003-11-01), Anthony et al.
patent: 6661703 (2003-12-01), Ikeda
patent: 6667118 (2003-12-01), Chang et al.
patent: 6740397 (2004-05-01), Lee
patent: 6833573 (2004-12-01), Worledge
patent: 2002/0127436 (2002-09-01), Shibamoto et al.
patent: 2004/0115481 (2004-06-01), Pelhos et al.
patent: 2004/0161577 (2004-08-01), Umezawa et al.
Bottom-Up Approach in SI Technology Based on Surface Structure Design, pp. 992-1001, Electrochemical Society Proceedings, vol. 2002-2, T. Ogino, et al., NTT Basic Research Laboratories.
R. Glang et al., “Handbook of Thin Film Technology,” McGraw-Hill, 1970, pp. 17-40, 17-41.
Park et al., “Growth-induced Uniaxial In-Plane Magnetic Anisotropy for Ultrathin Fe Deposited on MgO(001) by Oblique-Incidence Molecular Beam Epitaxy,” Appl. Phys. Lett., 66 (Apr. 1995) 2140.
McMichael et al., Strong anisotropy in Thin Magnetic Films Deposited on Obliquely Sputtered Ta Underlayers, J. Appl. Phys., 88, (Nov. 2000), 5296.
Sekiba et al., “Uniaxial Magnetic Anisotropy Tuned by Nanoscale Ripple Formation: Ion-Sculpting of Co/Cu (001) Thin Films,” Appl. Phys. Lett., 84 (Feb. 2004) 762.
De Wit et al., “Induced Anisotropy of Amorphous CoFeSiB and CoNbZr Magnetic Materials,” IEEE Trans., Magnetics, 23, (Sep. 1987), 2123.
Cho et al., “Effect of Seed Layer on the Magnetoresistance Characteristics in a-CoNbZr-Based Spin Valves,” IEEE Trans. Magnetics, 34, (Jul. 1998), 1414.
Tegan et al., “Effect of Néel Coupling on Magnetic Tunnel Junctions,” J. Appl. Phys., 89, (Jun. 2001), 8169.
Pietambaram et al., “Exchange Coupling Control and Thermal Endurance of Synthetic Antiferromagnet Structures for MRAM,” IEEE Trans. Magnetics, 40 (Jul. 2004), 2619.
Merriam-Webster's Collegiate Dictionary Tenth Edition, 1998, p. 45.

Affiliated with

Also associated with

Rating

Method for production of MRAM elements does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for production of MRAM elements, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for production of MRAM elements will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4026103