Method of manufacturing solid-state imaging device and...

Details Method of manufacturing solid-state imaging device and... Method of manufacturing solid-state imaging device and...

Filed on

2007-02-23

Date issued

2008-11-04

Examiner

Hoang, Quoc D (Department: 2892)

Patent Class

Semiconductor device manufacturing: process

SubClass

Making device or circuit emissive of nonelectrical signal

Other Related Categories

C257S290000, C257SE21532, C257SE25023

Type

Reexamination Certificate

Status

active

Patent number

07445947

Description

ABSTRACT:
After electrode pads20formed on a silicon substrate1and an electrode21to be connected thereto are exposed, a photoelectric conversion layer12is formed via a first mask23which covers exposed surfaces of the electrode pads20and the electrode21. Then, a second electrode13is formed on a third electrode via a second mask26in which an opening is formed. This establishes a connection between the second electrode13and the electrode pads20.

REFERENCES:
patent: 7268369 (2007-09-01), Araki
patent: 2002-502120 (2002-01-01), None
patent: 2002-83946 (2002-03-01), None
patent: WO 99/39372 (1999-08-01), None

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