INP heterostructure devices

Details INP heterostructure devices INP heterostructure devices

1998-05-01

1999-05-25

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257198, 257623, 257751, H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

059071656

ABSTRACT:
The specification describes a metal contact material optimized for diffused contacts to the buried emitter-base junction in DHBT devices. The metal contact material is a multilayer structure of Pd-Pt-Au which gives the required critical diffusion properties for low resistance contacts to the buried base layer without shorting to the collector layer.

REFERENCES:
patent: 5001534 (1991-03-01), Lunardi et al.
patent: 5036372 (1991-07-01), Ohishi et al.
patent: 5719415 (1998-02-01), Yagura et al.
patent: 5729033 (1998-03-01), Hafizi

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