Method of making ultrapure silicon nitride precursor

Details Method of making ultrapure silicon nitride precursor Method of making ultrapure silicon nitride precursor

1985-12-23

1987-08-11

Doll, John

Chemistry of inorganic compounds

Silicon or compound thereof

423344, 423351, 423311, C01B 3300

Patent

active

046860959

ABSTRACT:
Ultrapure silicon nitride precursor is made by: (a) continuously reacting liquid silicon halide (SiCl.sub.4) with an excess of liquid ammonia (NH.sub.3) (i) in the effective absence of contaminants, (ii) at a reaction situs in an inert atmosphere to form the silicon nitride precursor as a precipitate, and (iii) with a ratio of liquid ammonia to silicon halide (equal to or greater than 21 molar) effective to solubilize any gas reaction products; (b) providing a pressure differential to simultaneously and continuously withdraw a filtered portion of the excess liquid ammonia to leave the silicon nitride precursor precipitate in the reaction situs; and (c) adding ammonia to the excess of ammonia in said reaction situs to replace the withdrawn filtered portion of the liquid ammonia.
The reaction is carried out with vigorous stirring of the liquid mixture and the atmosphere over the entire mixture is regulated to contain only ammonia vapor and nitrogen. The temperature of the liquid mixture is maintained between -33.degree. C. to -69.degree. C. by employing a cooling jacket containing dry ice, a slush of dry ice and acetone, isopropanol or cellosolve, and by recycling the withdrawn liquid ammonia and re-adding it to the reaction situs either as a cooling liquid or as a heating gas.

REFERENCES:
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patent: 4196178 (1980-04-01), Iwai et al.
patent: 4397828 (1983-08-01), Seyferth et al.
Glemser and Naumann, "Uber den thermischen Abbau von Siliciumdiimid Si(NH).sub.2 ", Zeitschrift fur Anorganiche und Allgemeine Chemie, Band 298, 134-141 (1959).

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