Semiconductor device having via connecting between...

Details Semiconductor device having via connecting between... Semiconductor device having via connecting between...

2004-12-02

2008-10-21

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S750000, C257S752000, C257S758000, C257S773000, C257S774000, C257S775000, C257S776000, C257SE23145, C257SE29119, C438S598000, C438S601000, C438S623000

Reexamination Certificate

active

07439623

ABSTRACT:
A first insulating film is provided between a lower interconnect and an upper interconnect. The lower interconnect and the upper interconnect are connected to each other by way of a via formed in the first insulating film. A dummy via or an insulating slit is formed on/in the upper interconnect near the via.

REFERENCES:
patent: 6717267 (2004-04-01), Kunikiyo
patent: 6919637 (2005-07-01), He et al.
patent: 2002/0145201 (2002-10-01), Armbrust et al.
patent: 1304175 (2001-07-01), None
patent: 2000-012688 (2000-01-01), None
patent: 2000-331991 (2000-11-01), None
patent: 2002-033384 (2002-01-01), None
patent: 2002-299437 (2002-10-01), None
Chinese Office Action Issued in Chinese Patent Application No. CN 200410096561.2, dated Jul. 13, 2007.

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