Method of polishing a silicon-containing dielectric

Details Method of polishing a silicon-containing dielectric Method of polishing a silicon-containing dielectric

2004-02-02

2008-10-28

Tran, Binh X (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S691000, C438S692000, C438S693000, C216S089000

Reexamination Certificate

active

07442645

ABSTRACT:
The inventive method of polishing a silicon-containing dielectric layer involves the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing composition has a pH of about 4 to about 6. The inventive chemical-mechanical polishing system comprises (a) ceria, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing system has a pH of about 4 to about 6.

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