Method for manufacturing semiconductor device

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S745000, C438S754000

Reexamination Certificate

active

07432211

ABSTRACT:
It is an object of the present invention to a method for manufacturing a semiconductor device, by which a reaction product formed when a conductive layer is etched can be removed. A method for manufacturing a semiconductor device according to the present invention includes a step of felling a reaction product adhering to a conductive layer so as to extend in a perpendicular direction so that the thickness of the reaction product with respect to a direction in which an active species excited by plasma discharge is accelerated. It is to be noted that the reaction product is produced when the conductive layer is etched.

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