Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-04-06
2008-10-07
Chen, Kin-Chan (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S745000, C438S754000
Reexamination Certificate
active
07432211
ABSTRACT:
It is an object of the present invention to a method for manufacturing a semiconductor device, by which a reaction product formed when a conductive layer is etched can be removed. A method for manufacturing a semiconductor device according to the present invention includes a step of felling a reaction product adhering to a conductive layer so as to extend in a perpendicular direction so that the thickness of the reaction product with respect to a direction in which an active species excited by plasma discharge is accelerated. It is to be noted that the reaction product is produced when the conductive layer is etched.
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Chen Kin-Chan
Costellia Jeffrey L.
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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