Method of fabricating CMOS image sensor

Details Method of fabricating CMOS image sensor Method of fabricating CMOS image sensor

2005-10-07

2008-08-26

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257SE27133

Reexamination Certificate

active

07416914

ABSTRACT:
A method of fabricating a CMOS image sensor is disclosed that enhances device robustness. The method includes the steps of forming a metal pad on a pad area of a substrate, forming a planarizing layer on the substrate including the metal pad, removing a portion of the planarizing layer to open a surface of the metal pad, forming a protective layer over the substrate including the metal pad, coating a color filter resist layer on the protective layer and selectively exposing the color filter resist layer, coating a microlens resist layer on the color filter resist layer and selectively exposing the microlens resist layer, developing the exposed color filter and microlens resist layers, forming a pad opening by selectively removing the protective layer to open a surface of the metal, and reflowing the microlens pattern.

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