Semiconductor device and fabrication process thereof

Details Semiconductor device and fabrication process thereof Semiconductor device and fabrication process thereof

2004-11-19

2008-08-26

Baumeister, Bradley (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Altering etchability of substrate region by compositional or...

C257SE21252, C257SE21279

Reexamination Certificate

active

07416988

ABSTRACT:
A method of fabricating a semiconductor device includes the steps of modifying a damaged layer containing carbon and formed at a semiconductor surface by exposing the damaged layer to oxygen radicals to form a modified layer, and removing the modified layer by a wet etching process, wherein the modifying step is conducted by adding an active specie of an element that would obstruct formation of double bond between a Si atom and an oxygen atom by causing a chemical bond with Si atoms on the semiconductor surface.

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