Method for fabricating an interconnect for semiconductor...

Details Method for fabricating an interconnect for semiconductor... Method for fabricating an interconnect for semiconductor...

2006-04-03

2008-08-12

Arbes, C. J (Department: 3729)

Metal working

Method of mechanical manufacture

Electrical device making

C029S825000, C029S843000, C029S844000

Reexamination Certificate

active

07409762

ABSTRACT:
A method for fabricating an interconnect for testing a semiconductor component includes the steps of providing a substrate, and forming interconnect contacts on the substrate configured to electrically engage component contacts on the component. The interconnect contacts include flexible spring segments defined by grooves in the substrate, shaped openings in the substrate, or shaped portions of the substrate. The spring segments are configured to flex to exert spring forces on the component contacts, and to compensate for variations in the size or planarity of the component contacts. The interconnect can be configured to test wafer sized components, or to test die sized components.

REFERENCES:
patent: 5006792 (1991-04-01), Malhi et al.
patent: 5172050 (1992-12-01), Swapp
patent: 5286944 (1994-02-01), Li
patent: 5378330 (1995-01-01), Li et al.
patent: 5419807 (1995-05-01), Akram et al.
patent: 5478779 (1995-12-01), Akram
patent: 5483741 (1996-01-01), Akram et al.
patent: 5487999 (1996-01-01), Farnworth
patent: 5519332 (1996-05-01), Wood et al.
patent: 5541525 (1996-07-01), Wood et al.
patent: 5559444 (1996-09-01), Farnworth et al.
patent: 5686317 (1997-11-01), Akram et al.
patent: 5716218 (1998-02-01), Farnworth et al.
patent: 5756370 (1998-05-01), Farnworth et al.
patent: 5781022 (1998-07-01), Wood et al.
patent: 5783461 (1998-07-01), Hembree
patent: 5815000 (1998-09-01), Farnworth et al.
patent: 5869974 (1999-02-01), Akram et al.
patent: 5894161 (1999-04-01), Akram et al.
patent: 6005288 (1999-12-01), Farnworth et al.
patent: 6025730 (2000-02-01), Akram et al.
patent: 6025731 (2000-02-01), Hembree et al.
patent: 6040239 (2000-03-01), Akram et al.
patent: 6060891 (2000-05-01), Hembree et al.
patent: 6064216 (2000-05-01), Farnworth et al.
patent: 6068669 (2000-05-01), Farnworth et al.
patent: 6072321 (2000-06-01), Akram et al.
patent: 6078186 (2000-06-01), Hembree et al.
patent: 6091252 (2000-07-01), Akram et al.
patent: 6114240 (2000-09-01), Akram et al.
patent: 6114864 (2000-09-01), Soejima
patent: 6130148 (2000-10-01), Farnworth et al.
patent: 6242931 (2001-06-01), Hembree et al.
patent: 6246250 (2001-06-01), Doherty et al.
patent: 6263566 (2001-07-01), Hembree et al.
patent: 6265245 (2001-07-01), Farnworth et al.
patent: 6275052 (2001-08-01), Hembree et al.
patent: 6294837 (2001-09-01), Akram et al.
patent: 6300782 (2001-10-01), Hembree et al.
patent: 6310484 (2001-10-01), Akram et al.
patent: 6313531 (2001-11-01), Geusic et al.
patent: 6359456 (2002-03-01), Hembree et al.
patent: 6437591 (2002-08-01), Farnworth et al.
patent: 6448529 (2002-09-01), Hiraishi et al.
patent: 6498503 (2002-12-01), Akram et al.
patent: 6529026 (2003-03-01), Farnworth et al.
patent: 6563215 (2003-05-01), Akram et al.
patent: 6586955 (2003-07-01), Fjelstad et al.
patent: 6600334 (2003-07-01), Hembree et al.
patent: 6670634 (2003-12-01), Akram et al.
patent: 6708399 (2004-03-01), Farnworth et al.
patent: 6982565 (2006-01-01), Kirby
patent: 7053641 (2006-05-01), Kirby
patent: 7078922 (2006-07-01), Kirby
patent: 2002-175752 (2002-06-01), None
Ultrasharp Silicon Cantilevers, MT-MDT SC11 and SC21 series, Ulrasharp Silicon Cantilevers, 1998, pp. 1-2.
Our Products, Artbeam Super Micro Electro-Discharge Processing Know-How, Matsushita Electric (Panasonic) Co., Ltd., Sep. 26, 2002, pp. 1-3.
Development of a New Electrode Wire for Wire Electro Discharge Machine, SEI News, Jan. 2000, pp. 1-2.
Micromachine Technology (III), Sep. 26, 2002, pp. 1-5.
What is Micro Electro-Discharge?, Matsushita Electric Industrial Co., Ltd., Sep. 26, 2002, pp. 1-2.

Affiliated with

Also associated with

Rating

Method for fabricating an interconnect for semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating an interconnect for semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating an interconnect for semiconductor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3997720