Substrate processing method

Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...

Reexamination Certificate

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C134S018000, C134S019000, C134S021000, C134S025100, C134S025400, C134S030000, C134S031000, C134S036000, C134S037000, C134S902000

Reexamination Certificate

active

07410543

ABSTRACT:
Resists can be removed while metal contamination of wafers, etc. and generation of particles, and growth of oxide films are suppressed. A substrate processing method comprises feeding a processing gas, such as ozone gas, into a processing vessel to pressurize an atmosphere surrounding a substrate. A solvent gas, such as steam, is fed into the processing vessel while the processing gas is fed into the processing vessel, whereby a resist of the substrate can be removed with the solvent gas and the processing gas while metal corrosion, etc. can be prevented.

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