Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-08-12
2008-08-26
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C349S044000
Reexamination Certificate
active
07417249
ABSTRACT:
According to the present invention, wirings, electrodes or the like formed from two films (an ITO film and an aluminum film) which are incompatible with each other are connected, and low power consumption is realized even if a display screen size is increased in an active matrix display device. A three-layer structure or a two-layer structure is employed to obtain a favorable ohmic contact with ITO. The structure of a wiring or an electrode includes a layer having an aluminum carbon alloy which does not react with ITO. The wiring or an electrode is contacted with ITO.
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Akimoto Kengo
Murakami Satoshi
Dickey Thomas L
Fish & Richardson P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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