Semiconductor laser device and method for fabricating the same

Details Semiconductor laser device and method for fabricating the same Semiconductor laser device and method for fabricating the same

2006-07-20

2008-08-05

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045011, C372S046012, C372S068000

Reexamination Certificate

active

07408968

ABSTRACT:
A semiconductor laser device includes: a first light emitting device, the first light emitting device including a first first-conductive-type cladding layer, a first active layer having a first window region in the vicinity of a light emitting edge surface and a first second-conductive-type cladding layer stacked in this order on a substrate; and a second light emitting device, the second light emitting device including a second first-conductive-type cladding layer, a second active layer having a second window region in the vicinity of a light emitting edge surface and a second second-conductive-type cladding layer stacked in this order on the substrate. In the semiconductor laser device, respective lattice constants of the first second-conductive-type and second second-conductive-type cladding layers are adjusted to compensate for a difference in diffusion rate of an impurity between the first window region in the first active layer and the second window region in the second active layer.

REFERENCES:
patent: 2004/0066822 (2004-04-01), Ohkubo
patent: 2005/0018728 (2005-01-01), Ohkubo
patent: 2001-57462 (2001-02-01), None
patent: 2002-026447 (2002-01-01), None
Satoshi Arimoto, et al., “150 mW Findamental-Transverse-Mode Operation of 670 n, Window Laser Diode,” IEEE Journal of Quantum Electronics, 1993, pp. 1874-1879, vol. 29, No. 6.

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