Semiconductor laser device, optical disk apparatus and...

Details Semiconductor laser device, optical disk apparatus and... Semiconductor laser device, optical disk apparatus and...

2006-06-07

2008-09-16

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S044010, C372S029022, C372S029020

Reexamination Certificate

active

07426227

ABSTRACT:
A semiconductor laser device includes: a first cladding layer, which is made of a nitride semiconductor of a first conductivity type and is formed over a substrate; an active layer, which is made of another nitride semiconductor and is formed over the first cladding layer; and a second cladding layer, which is made of still another nitride semiconductor of a second conductivity type and is formed over the active layer. A spontaneous-emission-absorbing layer, which is made of yet another nitride semiconductor of the first conductivity type and has such an energy gap as absorbing spontaneous emission that has been radiated from the active layer, is formed between the substrate and the first cladding layer.

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Notice of Reasons of Rejection (Dated Apr. 8, 2003).
Notice of Reasons of Rejection, Patent Application No. 2000-021277, Mailing Date: Jul. 23, 2002 with English translation.

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