Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2004-07-29
2008-05-13
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
Reexamination Certificate
active
07371691
ABSTRACT:
The present invention provides a process of manufacturing a semiconductor device200while reducing silicon loss. In one aspect, the process includes removing a photoresist layer270from a semiconductor substrate235adjacent a gate240and cleaning the semiconductor substrate with a wet clean solution. The removing step includes subjecting the photoresist layer270to a plasma ash. The plasma ash removes at least a portion of a crust275formed on the photoresist layer270but leaves a substantial portion of the photoresist layer270. The photoresist layer270is subjected to a wet etch subsequent to the plasma ash that removes a substantial portion of the photoresist layer270.
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Hall Lindsey H.
Hurd Trace Q.
Riley Deborah J.
Barnes Seth
Brady III Wade J.
Smith Zandra
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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