Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to nonconductive state
Reexamination Certificate
2005-03-16
2008-09-16
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
Using structure alterable to nonconductive state
C438S601000
Reexamination Certificate
active
07425472
ABSTRACT:
A fuse for use in a semiconductor device includes spaced-apart terminals with at least two layers of conductive material and a single-layer conductive link joining the spaced-apart terminals and including a single layer of conductive material. A first, lower layer of the terminals of each fuse may be formed from conductively doped polysilicon. The second, upper layer of each fuse terminal may be formed from a polycide, a metal silicide, a metal, or a conductive alloy. The conductive link of each fuse may be formed from either the material of the first layer or the material of the second layer. Methods for fabricating the fuse include forming the first and second layers and patterning the first and second layers so as to form a fuse with the desired structure.
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Micro)n Technology, Inc.
TraskBritt
Tsai H. Jey
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