Solid-state element and solid-state element device

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

Reexamination Certificate

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Details

C257S072000, C257S079000, C257S222000, C257S225000, C257SE27001, C438S024000, C438S026000, C438S028000

Reexamination Certificate

active

07429750

ABSTRACT:
A solid-state element has: a semiconductor layer formed on a substrate, the semiconductor layer having a first layer that corresponds to an emission area of the solid-state element to and a second layer through which current is supplied to the first layer; a light discharge surface through which light emitted from the first layer is externally discharged, the light discharge surface being located on the side of the substrate; and an electrode having a plurality of regions that are of a conductive material and are in ohmic-contact with the second layer.

REFERENCES:
patent: 2004/0217369 (2004-11-01), Nitta et al.
patent: 11-150297 (1999-06-01), None
patent: 2004-179365 (2004-06-01), None

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