Horizontal electric field LCD TFT substrate having gate...

Details Horizontal electric field LCD TFT substrate having gate... Horizontal electric field LCD TFT substrate having gate...

2004-11-02

2008-09-23

Schechter, Andrew (Department: 2871)

Liquid crystal cells, elements and systems

Particular structure

Having significant detail of cell structure only

C349S122000, C349S141000, C349S187000

Reexamination Certificate

active

07428032

ABSTRACT:
A thin film transistor substrate structure of the present invention comprises a gate and a common lines formed from a first conductive layer; a data line formed from a second conductive layer and intersecting the gate and common lines, the data line insulated from the gate and common lines by a gate insulating film, a pixel area being defined by the intersection of the data and gate lines; a thin film transistor at the intersection; an extended portion of a common electrode in the pixel area; a pixel electrode formed from a third conductive layer connected to the thin film transistor and having an extended portion in the pixel area, a horizontal electric field formed by the pixel and common electrodes; and a plurality of pixel holes are defined, wherein the pixel electrode is disposed within at least one pixel hole and connected to a drain electrode.

REFERENCES:
patent: 6721026 (2004-04-01), Cheng et al.
patent: 6999136 (2006-02-01), Lee
patent: 2001/0010567 (2001-08-01), Rho et al.
patent: 2005/0110931 (2005-05-01), Yoo et al.
patent: 2000-033515 (2000-06-01), None
patent: 2002-091705 (2002-12-01), None
patent: 2003-082647 (2003-10-01), None

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