Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Reexamination Certificate
2006-11-15
2008-05-20
Lebentritt, Michael S. (Department: 2812)
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
C361S322000, C361S502000, C361S523000, C361S524000, C361S525000, C361S526000, C361S532000, C257SE21018
Reexamination Certificate
active
07374586
ABSTRACT:
A solid electrolytic capacitor, fabrication method, and coupling agent utilized in the same. The capacitor includes a valve metal layer, an oxide dielectric layer on at least a part of the surface of the valve metal layer, a coupling layer having a molecular chain with a first end bonding to the oxide dielectric layer by covalent bonding and second end with a functional group of a monomer of a conducting polymer, and a conducting polymer layer bonding to the monomer by covalent bonding.
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Tsai Li-Duan
Tseng Wen-Nan
Wu Chun-Guey
Industrial Technology Research Institute
Lebentritt Michael S.
Lee Kyoung
Thomas Kayden Horstemeyer & Risley
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