Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2006-02-03
2008-05-13
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185190, C257S374000, C257S397000
Reexamination Certificate
active
07372734
ABSTRACT:
A nonvolatile memory cell is provided. The memory cell includes a storage transistor and an injector in a well of an n-type conductivity. The well is formed in a semiconductor substrate of a p-type conductivity. The storage transistor comprises a source, a drain, a channel, and a charge storage region. The source and the drain are formed in the well and having the p-type conductivity with the channel of the well defined therebetween. The charge storage region is disposed over and insulated from the channel region by an insulator. Further provided are methods operating the memory cell, including means for injecting electrons from the channel through the insulator onto the charge storage region and means for injecting holes from the injector through the well through the channel through the insulator onto the charge storage region. The memory cell can be implemented in a conventional logic CMOS process.
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Hoang Huan
Tran Anthan T
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