Porogen material

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor

Reexamination Certificate

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C257SE23141, C257SE23179, C257SE21524

Reexamination Certificate

active

07342295

ABSTRACT:
A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film as well as semiconductor devices employing circuit features isolated by the porous film are also present.

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