Semiconductor light-emitting element

Details Semiconductor light-emitting element Semiconductor light-emitting element

2005-05-27

2008-09-09

Tran, Long K. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S013000, C257S103000, C257SE33001, C257SE33034, C438S022000

Reissue Patent

active

RE040485

ABSTRACT:
In a semiconductor light-emitting element, an underlayer is made of AlN layer, and a first cladding layer is made of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer. Then, at least one rare earth metal element is incorporated into the base layer and/or the island-shaped single crystal portions.

REFERENCES:
patent: 5075742 (1991-12-01), Gerard et al.
patent: 5523589 (1996-06-01), Edmond et al.
patent: 5684309 (1997-11-01), McIntosh et al.
patent: 5963787 (1999-10-01), Kimura et al.
patent: 6177202 (2001-01-01), Takehara et al.
patent: 6177292 (2001-01-01), Hong et al.
patent: 0 437 385 (1991-07-01), None
patent: 09-018053 (1997-01-01), None
patent: 09/064477 (1997-03-01), None
patent: 10-027923 (1998-01-01), None
patent: 10-079501 (1998-03-01), None
patent: 11-354839 (1999-12-01), None
patent: 11-354840 (1999-12-01), None
patent: 11-354842 (1999-12-01), None
patent: 11-3401147 (1999-12-01), None
patent: 2000-091703 (2000-03-01), None
Damilano et al., “From visible to white light emission by GaN quantum dots on Si(111) substrate”, American Institute of Physics, Applied Physics Letters, vol. 75, No. 7, Aug. 16, 1999, pp. 962-964.
Rouviére et al., “Preferential nucleation of GaN quantum dots at the edge of A1N threading dislocations”, American Institute of Physics, Applied Physics Letters, vol. 75, No. 17, Oct. 25, 1999, pp. 2632-2634.
Hirayama et al., “Intense photoluminescence from self-assembling InGaN quantum dots artifically fabricated on AlGaN surfaces”, American Institute of Physics, Applied Physics Letters, vol. 72, No. 14, Apr. 6, 1998, pp. 1736-1738.
Widmann et al., “Growth kinetics and optical properties of self-organized GaN quantum dots”, American Institute of Physics, Journal of Applied Physics, vol. 83, No. 12, Jun. 15, 1998, pp. 7618-7624.
Ohba et al., “Growth of High-Quality AIN and AIN/GaN/AIN Heterostructure on Sapphire Substrate”, Jpn. J. Appl. Phys., vol. 35 (1996), Part 2, No. 8B, Aug. 15, 1996, pp. L1013-L1015.
Yamamoto et al., “Nitridation effects of substrate on the metalorganic chemical vapor deposition growth of InN on Si an α-Al2O3substrates”, Journal of Crystal Growth, 137 (1994) Apr. Nos. 3/4, pp. 415-420.

Affiliated with

Also associated with

Rating

Semiconductor light-emitting element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor light-emitting element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light-emitting element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3969907