Selective filtering of wavelength-converted semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

Reexamination Certificate

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C257S099000, C257S102000, C257SE33054, C257SE33061

Reexamination Certificate

active

07402840

ABSTRACT:
A structure includes a semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light of a first peak wavelength. A wavelength-converting material that absorbs the first light and emits second light of a second peak wavelength is disposed in the path of the first light. A filter material that transmits a portion of the first light and absorbs or reflects a portion of the first light is disposed over the wavelength-converting material.

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patent: 1 220 332 (2002-07-01), None
Patent Abstracts of Japan, Publication No. 07099345, Publication Date: Apr. 11, 1995, 1 page.
European Search Report, 3 pages, date: May 24, 2005.

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